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C3130 - Silicon NPN Transistor

Features

  • s.
  • High transition frequency fT.
  • Small collector output capacitance (Common base, input open cir- 0.40+.
  • 00..0150 3 0.16+.
  • 00..0160 0.4±0.2 1.50.
  • +00..0255 2.8.
  • +00..32 cuited) Cob and reverse transfer capacitance (Common emitter) Crb.
  • Mini type package, allowing downsizing of the equipment and au- tomatic insertion through the tape packing and the magazine packing 1 2 (0.95) (0.95) 1.9±0.1 2.90+.
  • 00..0250 5˚ (0.65) /.

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Datasheet Details

Part number C3130
Manufacturer Panasonic
File Size 217.43 KB
Description Silicon NPN Transistor
Datasheet download datasheet C3130 Datasheet

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Full PDF Text Transcription

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Transistors 2SC3130 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing ■ Features • High transition frequency fT • Small collector output capacitance (Common base, input open cir- 0.40+–00..0150 3 0.16+–00..0160 0.4±0.2 1.50–+00..0255 2.8–+00..32 cuited) Cob and reverse transfer capacitance (Common emitter) Crb • Mini type package, allowing downsizing of the equipment and au- tomatic insertion through the tape packing and the magazine packing 1 2 (0.95) (0.95) 1.9±0.1 2.90+–00..0250 5˚ (0.65) / ■ Absolute Maximum Ratings Ta = 25°C 10˚ e e) Parameter Symbol Rating Unit c e. d typ Collector-base voltage (Emitter open) VCBO 15 V n d stag tinue Collector-emitter voltage (Base open) VCEO 10 0 to 0.1 1.1–+00..12 1.1–+00..
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