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C2590 - 2SC2590

Key Features

  • φ 3.16±0.1 3.8±0.3 11.0±0.5.
  • Excellent collector current IC characteristics of forward current 3.05±0.1 transfer ratio hFE.
  • High transition frequency fT.
  • TO-126B package which requires no insulation plate for installa- tion to the heat sink 1.9±0.1 16.0±1.0 /.
  • Absolute Maximum Ratings Ta = 25°C e Parameter Symbol Rating Unit c type) Collector-base voltage (Emitter open) VCBO 120 V n d ge. ed Collector-emitter voltage (Base open) VCEO 120 V le st.

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Power Transistors 2SC2590 Silicon NPN epitaxial planar type For low-frequency power amplification 8.0+–00..15 Unit: mm 3.2±0.2 ■ Features φ 3.16±0.1 3.8±0.3 11.0±0.5 • Excellent collector current IC characteristics of forward current 3.05±0.1 transfer ratio hFE • High transition frequency fT • TO-126B package which requires no insulation plate for installa- tion to the heat sink 1.9±0.1 16.0±1.0 / ■ Absolute Maximum Ratings Ta = 25°C e Parameter Symbol Rating Unit c type) Collector-base voltage (Emitter open) VCBO 120 V n d ge. ed Collector-emitter voltage (Base open) VCEO 120 V le sta ntinu Emitter-base voltage (Collector open) VEBO 5 V a e cyc isco Collector current IC 0.5 A life d, d Peak collector current ICP 1.