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C2295 - 2SC2295

Features

  • s 0.4±0.2.
  • Optimum for RF amplification of FM/AM radios 5˚.
  • High transition frequency fT.
  • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing 1 2 (0.95) (0.95) 1.9±0.1 2.90+.
  • 00..0250 (0.65) /.
  • Absolute Maximum Ratings Ta = 25°C e pe) Parameter Symbol Rating Unit c e. d ty Collector-base voltage (Emitter open) VCBO 30 V n d stag tinue Collector-emitter voltage (Bas.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistors 2SC2295 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1022 0.40+–00..0150 Unit: mm 0.16+–00..0160 3 1.50–+00..0255 2.8–+00..32 ■ Features 0.4±0.2 • Optimum for RF amplification of FM/AM radios 5˚ • High transition frequency fT • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing 1 2 (0.95) (0.95) 1.9±0.1 2.90+–00..0250 (0.65) / ■ Absolute Maximum Ratings Ta = 25°C e pe) Parameter Symbol Rating Unit c e. d ty Collector-base voltage (Emitter open) VCBO 30 V n d stag tinue Collector-emitter voltage (Base open) VCEO 20 0 to 0.1 1.1–+00..12 1.1–+00..
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