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C2258 - 2SC2258

Key Features

  • φ 3.16±0.1 3.8±0.3 11.0±0.5.
  • High collector-emitter voltage (Base open) VCEO 3.05±0.1.
  • High transition frequency fT.
  • TO-126B package which requires no insulation plate for installation to the heat sink 1.9±0.1 16.0±1.0.
  • Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit e Collector-base voltage (Emitter open) VCBO 250 V pe) Collector-emitter voltage (Base open) VCEO 250 V nc d ge. ed ty Emitter-base voltage (Collector open) VEBO.

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Full PDF Text Transcription (Reference)

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Power Transistors 2SC2258 Silicon NPN triple diffusion planar type For high breakdown voltage general amplification 8.0+–00..15 Unit: mm 3.2±0.2 ■ Features φ 3.16±0.1 3.8±0.3 11.0±0.5 • High collector-emitter voltage (Base open) VCEO 3.05±0.1 • High transition frequency fT • TO-126B package which requires no insulation plate for installation to the heat sink 1.9±0.1 16.0±1.0 ■ Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit e Collector-base voltage (Emitter open) VCBO 250 V pe) Collector-emitter voltage (Base open) VCEO 250 V nc d ge. ed ty Emitter-base voltage (Collector open) VEBO 7 V sta tinu Collector current IC 100 mA a e cle con Peak collector current n u duct lifetcyyped, dis Collector power dissipation ICP 150 mA PC 1.