Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC1383
Silicon NPN epitaxial planar type
For low-frequency power amplification and driver amplification
Complementary to 2SA0683
Features
Package
Low collector-emitter saturation voltage VCE(sat)
Code
Complementary pair with 2SA0683
TO-92L-A1
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
/ Collector-base voltage (Emitter open)
VCBO
30
V
Pin Name
1. Emitter
2. Collector
3. Base
Collector-emitter voltage (Base open)
e pe) Emitter-base voltage (Collector open)
c e. d ty Collector current
n d stag tinue Peak collector current
a e cle con Collector power dissipation
lifecy , dis Junction temperature
n u duct typed Storage temperature
VCEO
25
V
VEBO
5
V
IC
1
A
ICP
1.5
A
PC
1
W
Tj
150
°C
Tstg –55 to +150 °C
te ting four Pcroontinued Electrical Characteristics Ta = 25°C±3°C
win dis Parameter
Symbol
Conditions
Min Typ Max
in n s follo laned Collector-base voltage (Emitter open)
VCBO IC = 10 mA, IE = 0
30
a o lude e, p Collector-emitter voltage (Base open)
VCEO IC = 2 mA, IB = 0
25
inc typ Emitter-base voltage (Collector open)
VEBO IE = 10 mA, IC = 0
5
c tinued ance Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0
M is iscon ainten Forward current transfer ratio *1
hFE1 *2 VCE = 10 V, IC = 500 mA
85
/D m hFE2 VCE = 5 V, IC = 1 A
50
ce pe, Collector-emitter saturation voltage
VCE(sat) IC = 500 mA, IB = 50 mA
D tenan ce ty Base-emitter saturation voltage
VBE(sat) IC = 500 mA, IB = 50 mA
ain nan Transition frequency
fT VCB = 10 V, IE = –50 mA, f = 200 MHz
M ainte Collector output capacitance
m (Common base, input open circuited)
Cre VCB = 10 V, IE = 0, f = 1 MHz
0.1
340
0.2 0.4
0.85 1.20
200
11
20
ned Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
(pla 2. *1: Pulse measurement
Unit
V
V
V
mA
V
V
MHz
pF
*2: Rank classification
Rank
Q
R
S
hFE1
85 to 170
120 to 240
170 to 340
Publication date : October 2008
SJC00104DED
1
