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Panasonic Electronic Components Datasheet

C1317 Datasheet

Silicon NPN Transistor

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Transistors
2SC1317, 2SC1318
Silicon NPN epitaxial planer type
For low-frequency power amplification and driver amplification
Complementary to 2SA719 and 2SA720
I Features
Low collector to emitter saturation voltage VCE(sat)
Complementary pair with 2SA719 and 2SA720
5.0±0.2
0.7±0.1
Unit: mm
4.0±0.2
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector to
2SC1317
VCBO
30
V
base voltage
2SC1318
60
Collector to
2SC1317
VCEO
25
V
emitter voltage 2SC1318
50
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VEBO
7
V
ICP
1
A
IC
500
mA
PC
625
mW
Tj
150
°C
Tstg
55 to +150
°C
0.45+–00..115
(1.27)
(1.27)
0.45+–00..115
123
2.54±0.15
1: Emitter
2: Collector
3: Base
TO-92 Package
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Collector cutoff current
ICBO
VCB = 20 V, IE = 0
Collector to
2SC1317
VCBO
IC = 10 µA, IE = 0
30
base voltage
2SC1318
60
Collector to
2SC1317
VCEO
IC = 10 mA, IB = 0
25
emitter voltage
2SC1318
50
Emitter to base voltage
Forward current transfer ratio *1
Collector to emitter saturation voltage *1
Base to emitter saturation voltage *1
Transition frequency
Collector output capacitance
VEBO
IE = 10 µA, IC = 0
7
hFE1 *2 VCE = 10 V, IC = 150 mA
85
hFE2
VCE = 10 V, IC = 500 mA
40
VCE(sat) IC = 300 mA, IB = 30 mA
VBE(sat) IC = 300 mA, IB = 30 mA
fT
VCB = 10 V, IE = −50 mA, f = 200 MHz
Cob
VCB = 10 V, IE = 0, f = 1 MHz
Note) *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
hFE1
85 to 170 120 to 240 170 to 340
Typ Max
0.1
340
0.35 0.6
1.1 1.5
200
6
15
Unit
µA
V
V
V
V
V
MHz
pF
1


Panasonic Electronic Components Datasheet

C1317 Datasheet

Silicon NPN Transistor

No Preview Available !

2SC1317, 2SC1318
Transistors
PC Ta
800
700
600
500
400
300
200
100
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
VCE(sat) IC
100
IC / IB = 10
30
10
3
1
Ta = 75°C
0.3
25°C
25°C
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A)
IC VCE
800
Ta = 25°C
700
IB = 10 mA
9 mA
600
8 mA
7 mA
6 mA
500
5 mA
4 mA
400
3 mA
300
2 mA
200
1 mA
100
0
0 2 4 6 8 10 12 14 16 18 20
Collector to emitter voltage VCE (V)
VBE(sat) IC
100
IC / IB = 10
30
10
3
25°C Ta = 75°C
1
25°C
0.3
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A)
fT IE
240
VCB = 10 V
Ta = 25°C
200
160
120
80
40
0
1 2 3 5 10 2030 50 100
Emitter current IE (mA)
Cob VCB
12
IE = 0
f = 1 MHz
10
Ta = 25°C
8
6
4
2
0
1 2 3 5 10 20 30 50 100
Collector to base voltage VCB (V)
IC IB
800
VCE = 10 V
700
Ta = 25°C
600
500
400
300
200
100
0
0 1 2 3 4 5 6 7 8 9 10
Base current IB (mA)
hFE IC
300
VCE = 10 V
250
Ta = 75°C
200
25°C
150
25°C
100
50
0
0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A)
VCER RBE
120
IC = 2 mA
Ta = 25°C
100
80
60
2SC1318
40
2SC1317
20
0
1 3 10 30 100 300 1 000
Base to emitter resistance RBE (k)
2


Part Number C1317
Description Silicon NPN Transistor
Maker Panasonic
PDF Download

C1317 Datasheet PDF






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