q Possible to solder the radiation fin directly to printed cicuit board q High collector to emitter VCEO q Large collector power dissipation PC
s Absolute Maximum Ratings (Ta=25˚C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation (TC=25°C) Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings.
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Power Transistors
2SB968
Silicon PNP epitaxial planar type
For low-frequency output amplification Complementary to 2SD1295
6.5±0.1 5.3±0.1 4.35±0.1
Unit: mm
2.3±0.1 0.5±0.1
7.3±0.1 1.8±0.1
s Features
q Possible to solder the radiation fin directly to printed cicuit board q High collector to emitter VCEO q Large collector power dissipation PC
s Absolute Maximum Ratings (Ta=25˚C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation (TC=25°C) Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings –50 –40 –5 –3 –1.
B968 Datasheet
