q Optimum for 35W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat): < 2.5V q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
14.0±0.5 Solder Dip 4.0
16.7±0.3 7.5±0.2
φ3.1±0.1
1.3±0.2 1.4±0.1
0.8±0.1
0.5 +0.2.
0.1
Parameter
Symbol
Ratings
Unit
2.54±0.25
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak coll.
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
B1252. For precise diagrams, and layout, please refer to the original PDF.
Power Transistors 2SB1252 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1892 10.0±0.2 5.5±0.2 Unit: mm 4.2±0.2 2.7±0.2 0.7±0.1 ...
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ementary to 2SD1892 10.0±0.2 5.5±0.2 Unit: mm 4.2±0.2 2.7±0.2 0.7±0.1 4.2±0.2 s Features q Optimum for 35W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat): < 2.5V q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (TC=25˚C) 14.0±0.5 Solder Dip 4.0 16.7±0.3 7.5±0.2 φ3.1±0.1 1.3±0.2 1.4±0.1 0.8±0.1 0.5 +0.2 –0.1 Parameter Symbol Ratings Unit 2.54±0.
B1252 Datasheet
