Datasheet4U Logo Datasheet4U.com

AQV214EH - PhotoMOS RELAY

Download the AQV214EH datasheet PDF. This datasheet also covers the AQV210EH variant, as both devices belong to the same photomos relay family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 1. Reinforced insulation of I/O isolation voltage 5,000V (Reinforced insulation type) 2. Controls low-level analog signals PhotoMOS feature extremely low closedcircuit offset voltage to enable control of low-level analog signals without distortion. 3. Stable on-resistance 4. Low-level off state leakage current of max. 1 μA.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AQV210EH-Panasonic.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DIP6-pin type, reinforced insulation available GE 1 Form A (AQV21❍EH) 8.8 .346 6.4 .252 8.8 .346 3.9 .154 6.4 .252 3.6 .142 (Height includes standoff) mm inch 16 25 34 FEATURES 1. Reinforced insulation of I/O isolation voltage 5,000V (Reinforced insulation type) 2. Controls low-level analog signals PhotoMOS feature extremely low closedcircuit offset voltage to enable control of low-level analog signals without distortion. 3. Stable on-resistance 4. Low-level off state leakage current of max. 1 μA TYPICAL APPLICATIONS • High-speed inspection machines • Telephone equipment • Data communication equipment • Computers RoHS compliant TYPES Output rating* I/O isolation Load voltage Load current Package Through hole terminal Tube packing style Part No.