2SK4174 fet equivalent, silicon n-channel enhancement mos fet.
* Gate-source surrender voltage VGSS : ±25 V guaranteed
* Avalanche energy capability guaranteed: EAS > 216 mJ
* High-speed switching: tf = 90 ns (typ.)
.
or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household.
Image gallery
TAGS
Download (Size : 297.18KB)