TO-220D built-in: Excellent package with withstand voltage 5 kV
guaranteed.
Absolute Maximum Ratings TC = 25°C
1.4±0.2 1.6±0.2
2.6±0.1
/ Parameter
Symbol Rating
Unit
0.8±0.1
0.55±0.15
e Collector-base voltage (Emitter open) VCBO
60
13.7±0.2 4.2±0.2
Solder Dip
V
pe) Collector-emitter voltage (Base open) VCEO
60
V
nc d ge. ed ty Emitter-base voltage (Collector open) VEBO
5
V
sta tinu Collector current
IC
8
A.
Full PDF Text Transcription for 2SC5505 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
2SC5505. For precise diagrams, and layout, please refer to the original PDF.
Power Transistors 2SC5505 Silicon NPN epitaxial planar type For power amplification 9.9±0.3 Unit: mm 4.6±0.2 2.9±0.2 3.0±0.5 ■ Features • High-speed switching φ 3.2±0.1 1...
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4.6±0.2 2.9±0.2 3.0±0.5 ■ Features • High-speed switching φ 3.2±0.1 15.0±0.5 • TO-220D built-in: Excellent package with withstand voltage 5 kV guaranteed ■ Absolute Maximum Ratings TC = 25°C 1.4±0.2 1.6±0.2 2.6±0.1 / Parameter Symbol Rating Unit 0.8±0.1 0.55±0.15 e Collector-base voltage (Emitter open) VCBO 60 13.7±0.2 4.2±0.2 Solder Dip V pe) Collector-emitter voltage (Base open) VCEO 60 V nc d ge. ed ty Emitter-base voltage (Collector open) VEBO 5 V sta tinu Collector current IC 8 A a e cycle iscon Peak collector current ICP 16 A life d, d Collector power dissipation PC 20 W n u duct type Ta = 25°C 2.
2SC5505 Datasheet
