2SB1623A - Silicon PNP epitaxial planar type Transistor
Panasonic
Key Features
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High forward current transfer ratio hFE.
Satisfactory linearity of forward current transfer ratio hFE.
Dielectric breakdown voltage of the package: > 5 kV
15.0±0.5
φ 3.2±0.1
13.7±0.2 4.2±0.2 Solder Dip.
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temper.
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Power Transistors
2SB1623A
Silicon PNP epitaxial planar type
For power amplification
9.9±0.3
Unit: mm
4.6±0.2 2.9±0.2
3.0±0.5
■ Features
• High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE • Dielectric breakdown voltage of the package: > 5 kV
15.0±0.5
φ 3.2±0.1
13.7±0.2 4.2±0.2 Solder Dip
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature TC = 25°C Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −80 −80 −5 −4 −8 40 2.0 150 −55 to +150 °C °C Unit V V V A A W
1.4±0.2 1.6±0.2 0.8±0.1
2.6±0.1
0.55±0.15
2.54±0.30 5.
2SB1623A Datasheet
