2SA2079 - Silicon PNP epitaxial planar type Power Transistors
Panasonic
Features
High forward current transfer ratio hFE.
Suitable for high-density mounting and douwsizing of the equipment for
ultraminiature leadless package Package: 0.6 mm × 1.0 mm (hight 0.39 mm).
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature
V.
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Transistors
2SA2079
Silicon PNP epitaxial planar type
For general amplification Complementary to 2SC5848
Features High forward current transfer ratio hFE Suitable for high-density mounting and douwsizing of the equipment for
ultraminiature leadless package Package: 0.6 mm × 1.0 mm (hight 0.39 mm)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature
VCBO VCEO VEBO
IC ICP PC Tj Tstg
–45 –45 –7 –100 –200 100 125 –55 to +125
Unit V V V mA mA mW °C °C
Unit: mm
0.15±0.05 0.05±0.03 0.35±0.01
32
0.60±0.05
1.00±0.05
1
0.39+−00..0013
0.25±0.05
0.
2SA2079 Datasheet
