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2SA1499 - Silicon PNP Transistor

Features

  • q High foward current transfer ratio hFE q High-speed switching q High collector to base voltage VCBO q Full-pack package which can be installed to the heat sink with one screw. s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C VCBO VCEO VEBO ICP IC PC.
  • 400.
  • 400.
  • 7.
  • 1.2.

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Power Transistors 2SA1499 Silicon PNP epitaxial planar type For high-speed switching s Features q High foward current transfer ratio hFE q High-speed switching q High collector to base voltage VCBO q Full-pack package which can be installed to the heat sink with one screw. s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C VCBO VCEO VEBO ICP IC PC –400 –400 –7 –1.2 – 0.6 25 2 Junction temperature Storage temperature Tj 150 Tstg –55 to +150 Unit V V V A A W ˚C ˚C 14.0±0.5 Solder Dip 4.0 16.7±0.3 7.5±0.2 0.7±0.1 10.0±0.2 5.5±0.2 Unit: mm 4.2±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.3±0.2 1.4±0.1 0.8±0.
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