Optimum for the driver stage of a low-frequency and 25 W to 30 W
output amplifier.
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature
VCBO VCEO VEBO
IC ICP PC Tj Tstg.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Transistors
2SA0777 (2SA777)
Silicon PNP epitaxial planar type
For low-frequency driver amplification Complementary to 2SC1509
■ Features
• High collector-emitter voltage (Base open) VCEO • Optimum for the driver stage of a low-frequency and 25 W to 30 W
output amplifier.
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature
VCBO VCEO VEBO
IC ICP PC Tj Tstg
−80 −80 −5 − 0.5 −1
1 150 −55 to +150
Unit V V V A A W °C °C
5.9±0.2
Unit: mm
4.9±0.2
8.6±0.2
0.7±0.1
13.5±0.5 0.7–+00..23
0.45+–00..12
0.45+–00..12
(1.27)
(1.27)
1 : Emitter
(3.