2PG001 Datasheet | Panasonic

Features - Low collector-emitter saturation voltage: VCE(sat) < 2.5 V - High speed hall time: tf = 250 nsec(typ.) - Package - Code TO-220F-A1 - Marking Symbol: 2PG001 Unit V V A A W W °C °C - Absolute Maximum Ratings TC = 25°C Parameter Collector-emitter voltage (E-B short) Gate-emitter voltage (E-B short) Collector current Peak collector current - Power dissipation Junction temperature Storage temperature Note) - : PW ≤ 10 us, Duty ≤ 1.0% Symbol VCES VGES IC ICP Ta = 25°C PC Tj Tstg Rating 300 ±30 30 120 40 2.0 150 - 55 to +150 - Pin Name 1. Gate 2. Collector 3. Emitter - Internal Connection - Electrical Characteristics TC = 25°C±3°C Parameter Collector-emitter voltage (E-B short) Collector-emitter cutoff current (E-B short) Gate-emitter cutoff current (E-B short) Gate-emitter threshold voltage Collector-emitter saturation voltage Short-circuit input capacitance (mon emitter) Short-circuit output capacitance (mon emitter) Reverse transfer capacitance (mon emitter) Gate charge load Gate-emitter charge Gate-collector charge Turn-on delay time Rise time Turn-off delay time .. Fall time Symbol VCES ICES IGES VGE(th) VCE(sat) Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf VCC = 150 V, IC = 30 A, RL ≈ 5 Ω, VGE = 15 V VCC = 150 V, IC = 30 A, VGE = 15 V VCE = 25 V, VGE = 0, f = 1 MHz Conditions IC = 1 m A, VGE = 0 VCE = 240 V, VGE = 0 VGE = ±30 V, VCE = 0 VCE = 10 V, IC = 1.0 m A VGE = 15 V, IC = 30 A 3.0 2.0 580 86 14 25 5 10 87 400 120 150 Min 300 50 ±1.0 5.5 2.5 Typ Max Unit V m A m A V V p F p F p F n C n C n C ns ns ns ns Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date : June 2007 SJN00003AED This product plies with the Ro HS Directive (EU 2002/95/EC). TO-220F-A1 Unit: mm 0.7 ±0.1 10.0 ±0.2 5.5 ±0.2 4.2 ±0.2 2.7 ±0.2 4.2 ±0.2 7.5 ±0.2 16.7 ±0.3 φ3.1 ±0.1 1.4 ±0.1 1.3 ±0.2 Solder Dip 14.0 ±0.5 (4.0) 0.8 ±0.1 0.5 -...