Datasheet4U Logo Datasheet4U.com

PJSR05 - Low Capacitance TVS and Diode Array

Features

  • Peak Power Dissipation of 350W 8/20µs Capacitance of 5.0pF at 0Vdc 1MHz Line-to-Ground I/O2 3 1 2 I/O1 Maximum Leakage Current of 1µA @ VRWM Industry Standard SMT Package SOT143 IEC61000-4-2, IEC61000-4-4 and IEC61000-4-5 Full Compliance 100% Tin Matte finish (LEAD-FREE.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PJS6413 20V P-Channel MOSFET PAN JIT
PJS6839 60V Dual P-Channel Enhancement Mode MOSFET PANJIT
PJSD03LCFN2 TVS DIODE Leiditech
PJSD05LCFN2 TVS Diode Leiditech
PJSD07LCFN2 Transient Voltage Suppressors SXSEMI

Other Datasheets by PanJit Semiconductor

Part Number Description
PJSR12 Low Capacitance TVS and Diode Array
PJSR70 Low Capacitance Diode Array
PJSRV05-4 Low Capacitance TVS and Diode Array
PJSRV05W-4 Low Capacitance TVS and Diode Array
PJSRV05W-4GDW Low Capacitance TVS/ESD Protection

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PJSR05 Low Capacitance TVS and Diode Array This diode array is configured to protect up to two data transmission lines acting as a line terminator, minimizing overshoot and undershoot conditions due to bus impedance as well as protect against over-voltage events as electrostatic discharges. Additionaly the TVS Device offers overvoltage transient protection between the operating voltage bus and ground plane. 3 4 Maximum www.DataSheet4U.com DRAFT SPEC 2 SPECIFICATION FEATURES Peak Power Dissipation of 350W 8/20µs Capacitance of 5.
Published: |