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Pan Jit International

PJSD36TS Datasheet Preview

PJSD36TS Datasheet

SINGLE LINE TVS DIODE

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PJSD03TS~PJSD36TS
SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS
VOLTAGE 3~36 Volts POWER 120 Watts
FEATURES
• 120 Watts peak pules power( tp=8/20μs)
• Small package for use in portable electronics
• Suitable replacement for MLV’S in ESD protection applications
• Low clamping voltage and leakage current
• In compliance with EU RoHS 2002/95/EC directives
APPLICATIONS
• Case: SOD-523 plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
• Approx Weight: 0.0014 grams
• Marking : PJSD03TS : KD
PJSD05TS : KE
PJSD07TS : KF
PJSD08TS : KR
PJSD12TS : LE
1
Cathode
PJSD15TS : LM
PJSD24TS : LZ
PJSD36TS : MP
2
Anode
MAXIMUM RATINGS AND ELECTRICAL CHATACTERISTICS
ABSOLUTE MAXIMUM RATING
Rating
Peak Pulse Power Dissipation (tp=8/20 μs)
ESD Voltage
Operating Temperature
Storage Temperature
Symbol
PPP
VESD
TJ
TSTG
Value
120
25
-50 to +150
-50 to +150
ELECTRICALCHATACTERISTICS
PJSD03TS
Parameter
Reverse Stand-Off Voltage
www.DRateaveSrhseeeBtr4eUak.dcoowmn Voltage
Reverse Leakage Current
Clamping Voltage(8/20μs)
Off State Junction Capacitance
Off State Junction Capacitance
Symbol
VRWM
VBR
IR
VC
CJ
CJ
Conditions
-
I BR=1mA
VR=3.3V
I PP=5A
0Vdc Bias=f=1MHz
3.3Vdc Bias=f=1MHz
Min.
-
4
-
-
-
-
Typical
-
-
-
-
-
-
Max.
3.3
-
200
6.5
200
100
Units
W
KV
OC
OC
Units
V
V
μA
V
pF
pF
July 20.2010-REV.00
PAGE . 1




Pan Jit International

PJSD36TS Datasheet Preview

PJSD36TS Datasheet

SINGLE LINE TVS DIODE

No Preview Available !

PJSD03TS~PJSD36TS
PJSD05TS
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20μs)
Off State Junction Capacitance
Off State Junction Capacitance
Symbol
VRWM
VBR
IR
VC
CJ
CJ
Conditions
-
I BR=1mA
VR=5V
I PP=5A
0Vdc Bias=f=1MHz
5Vdc Bias=f=1MHz
Min.
-
6.0
-
-
-
-
Typical
-
-
-
-
-
-
Max.
5
-
5
9
110
60
Units
V
V
μA
V
pF
pF
PJSD07TS
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20μs)
Off State Junction Capacitance
Symbol
VRWM
VBR
IR
VC
CJ
Conditions
-
I BR=1mA
VR=7V
I PP=8.8A
0Vdc Bias=f=1MHz
Min.
-
7.5
-
-
-
Typical
-
-
-
-
-
Max.
7.0
-
150
22.7
85
Units
V
V
nA
V
pF
PJSD08TS
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20μs)
Off State Junction Capacitance
PJSD12TS
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
www.DataSheet4U.com
Reverse Leakage Current
Clamping Voltage(8/20μs)
Off State Junction Capacitance
Symbol
VRWM
VBR
IR
VC
CJ
Conditions
-
I BR=1mA
VR=8V
I PP=5A
0Vdc Bias=f=1MHz
Min.
-
8.5
-
-
-
Typical
-
-
-
-
-
Max.
8
-
5
13
70
Units
V
V
μA
V
pF
Symbol
VRWM
VBR
IR
VC
C
J
Conditions
-
I BR=1mA
VR=12V
I PP=5A
0Vdc Bias=f=1MHz
Min.
-
13.3
-
-
-
Typical
-
-
-
-
-
Max.
12
-
5
17
60
Units
V
V
μA
V
pF
July 20.2010-REV.00
PAGE . 2


Part Number PJSD36TS
Description SINGLE LINE TVS DIODE
Maker Pan Jit International
Total Page 5 Pages
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