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Pan Jit International

PJSD08TG Datasheet Preview

PJSD08TG Datasheet

SINGLE LINE TVS DIODE

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PJSD03TG~PJSD36TG
SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS
VOLTAGE 3~36 Volts POWER 100 Watts
FEATURES
• 100 Watts peak pules power( tp=8/20µs)
• Small package for use in portable electronics
• Suitable replacement for MLV’S in ESD protection applications
• Low clamping voltage and leakage current
• In compliance with EU RoHS 2002/95/EC directives
APPLICATIONS
• Case: SOD-723 plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
• Approx.Weight : 0.00077 gram
• Marking : PJSD03TG : FS
PJSD05TG : FT
PJSD08TG : FU
PJSD12TG : FV
PJSD15TG : FW
PJSD24TG : FX
PJSD36TG : FY
MAXIMUM RATINGS AND ELECTRICAL CHATACTERISTICS
ABSOLUTE MAXIMUM RATING
Rating
Peak Pulse Power (tp=8/20 µs)
ESD Voltage
Operating Temperature
Storage Temperature
ELECTRICAL CHARA CTERISTICS
PJSD03TG
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
www.DataSheet4U.com
Clamping Voltage(8/20 µs)
Off State Junction Capacitance
Off State Junction Capacitance
Symbol
VRWM
VBR
IR
VC
CJ
CJ
Conditions
-
IBR=1mA
VR=3.3V
IPP=10A
0Vdc Bias=f=1MHz
3Vdc Bias=f=1MHz
Symbol
PPK
VESD
TJ
TSTG
Value
100
25
-50 to 150
-50 to 150
Min. Typical Max.
- - 3.3
4- -
- - 125
- - 7.5
- 180 -
- 100 -
Units
W
KV
OC
OC
Units
V
V
µA
V
pF
pF
REV.0.1-FEB.16.2009
PAGE . 1




Pan Jit International

PJSD08TG Datasheet Preview

PJSD08TG Datasheet

SINGLE LINE TVS DIODE

No Preview Available !

PJSD03TG~PJSD36TG
PJSD05TG
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20 µs)
Off State Junction Capacitance
Off State Junction Capacitance
PJSD08TG
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20 µs)
Off State Junction Capacitance
Off State Junction Capacitance
PJSD12TG
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20 µs)
Off State Junction Capacitance
Off State Junction Capacitance
PJSD15TG
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
www.DataSheet4U.com
Clamping Voltage(8/20 µs)
Off State Junction Capacitance
Off State Junction Capacitance
Symbol
VRW M
VB R
IR
VC
CJ
CJ
Conditions
-
IB R=1mA
VR=5V
IP P =8.5A
0Vdc Bias=f=1MHz
5Vdc Bias=f=1MHz
Min.
-
6
-
-
-
-
Symbol
VRW M
VB R
IR
VC
CJ
CJ
Conditions
-
IB R=1mA
VR=8V
IP P =7.5 A
0Vdc Bias=f=1MHz
8Vdc Bias=f=1MHz
Min.
-
8.5
-
-
-
-
Symbol
VRW M
VB R
IR
VC
CJ
CJ
Conditions
-
IB R=1mA
VR=12V
IP P =6.7A
0Vdc Bias=f=1MHz
12Vdc Bias=f=1MHz
Min.
-
13.3
-
-
-
-
Symbol
VRW M
VB R
IR
VC
CJ
CJ
Conditions
-
IB R=1mA
VR=15V
IP P =6A
0Vdc Bias=f=1MHz
15Vdc Bias=f=1MHz
Min.
-
16.7
-
-
-
-
Typical
-
-
-
-
-
65
Typical
-
-
-
-
-
40
Typical
-
-
-
-
-
30
Typical
-
-
-
-
-
20
Max.
5
-
10
9.8
110
-
Max.
8
-
10
13.4
70
-
Max.
12
-
1
20
46
-
Max.
15
-
1
24
35
-
Units
V
V
µA
V
pF
pF
Units
V
V
µA
V
pF
pF
Units
V
V
µA
V
pF
pF
Units
V
V
µA
V
pF
pF
REV.0.1-FEB.16.2009
PAGE . 2


Part Number PJSD08TG
Description SINGLE LINE TVS DIODE
Maker Pan Jit International
Total Page 5 Pages
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