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Pan Jit International

PJSD03TM Datasheet Preview

PJSD03TM Datasheet

ESD PROTECTION DIODES

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PJSD03TM ~ PJSD15TM
ESD PROTECTION DIODES
FEATURES
• IEC61000-4-2 Level 4 ESD Protection
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
Case: SOD-923, Plastic
Terminals: Solderable per MIL-STD-750, Method 2026
Polarity : Color band cathode
Approx.Weight : 0.0004gram
SO D -923
0.034(0.85)
0.029(0.75)
1
Cathode
2
Anode
0.042(1.05)
0.037(0.95)
0.018(0.45)
0.013(0.35)
MAXIMUM RATINGS
Rating
P eak P uls e P ower D i ssi pati on (8/20μs Waveform)
L e a d S o ld e r Te m p e ra ture - Ma xi m um
(10 Second Duration)
Op e r a ti ng J unc ti o n a nd S to ra g e Te m p e ra ture Ra ng e
Symbol
PPP
TL
TJ,TSTG
Value
40
260
-55 to + 150
Units
W
oC
oC
Stresses exceeding Maximum Ratings may damage the device. Maximum Rating are stress ratings only. Functional
operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the
www.DaRteaScohmeemt4eUn.dceodmOperating Conditions may affect device reliability.
Note : 1.FR-4 = 70 x 60 x 1mm.
July 20.2010-REV.00
PAGE . 1




Pan Jit International

PJSD03TM Datasheet Preview

PJSD03TM Datasheet

ESD PROTECTION DIODES

No Preview Available !

PJSD03TM ~ PJSD15TM
ELECTRICAL CHARACTERISTICS (TA=25oC unless
otherwise noted)
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage@I PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current@VRWM
Breakdown Voltage @ I T
Test Current
Forward Current
Forward Voltage@I F
Peak Pulse Power Dissipation
Max.Capacitance@VR=0 and f=1MHz
Symbol
I PP
VC
VRWM
IR
VBR
IT
IF
VF
PPP
CJ
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted, VF=1.1V Max.@I F=10mA)
Part Number
PJSD03TM
PJSD05TM
PJSD07TM
PJSD12TM
PJSD15TM
V RWM
Max.
V
3.3
5
7
12
15
I R@V RWM
Max.
μA
2.5
1
5
1
1
V BR@I T
(Note 2)
Mi n.
V
5.4
6.2
7.5
13.3
17.0
CJ
(Note 3)
Max.
pF
50
35
30
18
15
VC
Max Per
8 x2 0 μ s
V
10
12
15
23
30
I PP
IT
Marking
A mA
6 1.0
h
5 1.0
b
4 1.0
c
3 1.0
d
2 1.0
e
www.DataSheet4U.com
Note : 2.VBR is measured with a pulse test current IT at an ambinet temperature of 25oC
3.Capacitance at f=1MHz, VR=0V, TA=25oC
July 20.2010-REV.00
PAGE . 2


Part Number PJSD03TM
Description ESD PROTECTION DIODES
Maker Pan Jit International
Total Page 4 Pages
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