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PJS6601 Datasheet Preview

PJS6601 Datasheet

Complementary Enhancement Mode MOSFET

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PPJS6601
20V Complementary Enhancement Mode MOSFET
Voltage 20 / -20V Current 4.1 /-3.1A
SOT-23 6L
Features
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc.
Lead free in compliance with EU RoHS 2011/65/EU
directive
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-23 6L Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0005 ounces, 0.014 grams
Marking: SC1
Unit: inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 4)
Power Dissipation
Ta=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal Resistance
- Junction to Ambient (Note 3)
SYMBOL N-Ch LIMIT P-Ch LIMIT
VDS 20
-20
VGS +12
+12
ID 4.1 -3.1
IDM 16.4 -12.4
1.25
PD
10
TJ,TSTG
-55~150
RθJA
100
UNITS
V
V
A
A
W
mW/ oC
oC
oC/W
September 18,2015-REV.00
Page 1




Pan Jit International

PJS6601 Datasheet Preview

PJS6601 Datasheet

Complementary Enhancement Mode MOSFET

No Preview Available !

PPJS6601
N-Channel
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic (Note 5)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
SYMBOL
BVDSS
VGS(th)
RDS(on)
IDSS
IGSS
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IS
VSD
TEST CONDITION
VGS=0V, ID=250uA
VDS=VGS, ID=250uA
VGS=4.5V, ID=4.1A
VGS=2.5V, ID=2.8A
VGS=1.8V, ID=1.5A
VDS=20V, VGS=0V
VGS=+12V, VDS=0V
VDS=10V, ID=4.1A,
VGS=4.5V (Note 1,2)
VDS=10V, VGS=0V,
f=1.0MHZ
VDD=10V, ID=4.1A,
VGS=4.5V,
RG=6Ω (Note 1,2)
---
IS=1.0A, VGS=0V
MIN. TYP. MAX. UNITS
20 -
-V
0.4 0.66 1.2
V
- 41 56
- 50 68 mΩ
- 66 95
- - 1 uA
- - +100 nA
- 4.6 -
- 0.8 - nC
-1-
- 350 -
- 40 - pF
- 29 -
-4-
- 47 -
ns
- 18 -
- 10 -
- - 1.5 A
-
0.75
1.2
V
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper.
4. The maximum current rating is package limited.
5. Guaranteed by design, not subject to production testing
September 18,2015-REV.00
Page 2


Part Number PJS6601
Description Complementary Enhancement Mode MOSFET
Maker Pan Jit International
Total Page 9 Pages
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