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Pan Jit International

PJQ5478 Datasheet Preview

PJQ5478 Datasheet

100V N-Channel Enhancement Mode MOSFET

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PPJQ5478
100V N-Channel Enhancement Mode MOSFET
Voltage
100 V Current
60A
DFN5060-8L
Features
RDS(ON) , VGS@10V, ID@30A<12m
Advanced Trench Process Technology
High density cell design for ultra low on-resistance
Lead free in compliance with EU RoHS 2011/65/EU directive
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: DFN5060-8L Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0028 ounces, 0.08 grams
Marking: Q5478
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
Power Dissipation
TC=25oC
TC=100oC
TC=25oC
TC=25oC
TC=100oC
Continuous Drain Current
TA=25oC
TA=70oC
Power Dissipation
TA=25oC
TA=70oC
Single Pulse Avalanche Energy(Note 6)
Operating Junction and Storage Temperature Range
Typical Thermal Resistance(Note 4,5)
Junction to Case
Junction to Ambient
Limited only By Maximum Junction Temperature
SYMBOL
VDS
VGS
ID
IDM
PD
ID
PD
EAS
TJ,TSTG
RθJC
RθJA
LIMIT
100
+20
60
38
150
83
33
9
7.5
2.0
1.3
156
-55~150
1.5
62.5
UNITS
V
V
A
W
A
A
W
mJ
oC
oC/W
August 18,2015-REV.00
Page 1




Pan Jit International

PJQ5478 Datasheet Preview

PJQ5478 Datasheet

100V N-Channel Enhancement Mode MOSFET

No Preview Available !

PPJQ5478
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic (Note 7)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
SYMBOL
BVDSS
VGS(th)
RDS(on)
IDSS
IGSS
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IS
VSD
TEST CONDITION
VGS=0V,ID=250uA
VDS=VGS, ID=250uA
VGS=10V,ID=30A
VDS=80V,VGS=0V
VGS=+20V,VDS=0V
VDS=50V, ID=30A,
VGS=10V (Note 1,2)
VDS=30V, VGS=0V,
f=1.0MHZ
VDD=50V, ID=30A,
VGS=10V,
RG=3Ω (Note 1,2)
---
IS=30A,VGS=0V
MIN. TYP. MAX. UNITS
100 - - V
234V
- 9 12 mΩ
- - 1.0 uA
- - +100 nA
- 145 -
- 25 -
- 43 -
- 3921 -
- 255 -
- 96 -
- 27 -
- 13 -
- 15 -
- 43 -
nC
pF
ns
- - 60 A
-
0.8 1.3
V
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. Repetitive rating, pulse width limited by junction temperature TJ (MAX)=150°C. Ratings are based on low frequency
and duty cycles to keep initial TJ =25°C.
4. The maximum current rating is package limited.
5. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins. Mounted on a 1 inch2 with 2oz.square pad of copper.
6. The test condition is L=0.5mH, IAS=25A, VDD=25V, VGS=10V
7. Guaranteed by design, not subject to production testing.
August 18,2015-REV.00
Page 2


Part Number PJQ5478
Description 100V N-Channel Enhancement Mode MOSFET
Maker Pan Jit International
Total Page 7 Pages
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