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PJQ1902 - N-Channel Enhancement Mode MOSFET

Features

  • RDS(ON) , VGS@4.5V, ID@350mA.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PPJQ1902 30V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 30 V Current 500mA DFN3L Features  RDS(ON) , VGS@4.5V, ID@350mA<1.2Ω  RDS(ON) , VGS@2.5V, ID@200mA<1.6Ω  RDS(ON) , VGS@1.8V, ID@80mA<2.3Ω  RDS(ON) , VGS@1.5V, ID@10mA<2.5Ω(typ.)  Specially Designed for Switch Load, PWM Application, etc.  ESD Protected 2KV HBM  Lead free in compliance with EU RoHS 2011/65/EU directive  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: DFN3L Package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.00004 ounces, 0.
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