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Pan Jit International

PJQ1902 Datasheet Preview

PJQ1902 Datasheet

N-Channel Enhancement Mode MOSFET

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PPJQ1902
30V N-Channel Enhancement Mode MOSFET ESD Protected
Voltage
30 V Current 500mA
DFN3L
Features
RDS(ON) , VGS@4.5V, ID@350mA<1.2
RDS(ON) , VGS@2.5V, ID@200mA<1.6
RDS(ON) , VGS@1.8V, ID@80mA<2.3
RDS(ON) , VGS@1.5V, ID@10mA<2.5(typ.)
Specially Designed for Switch Load, PWM Application, etc.
ESD Protected 2KV HBM
Lead free in compliance with EU RoHS 2011/65/EU
directive
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: DFN3L Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.00004 ounces, 0.0011 grams
Marking: 2
Unit: inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Ta=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 3)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ,TSTG
RθJA
LIMIT
30
+10
500
1500
700
5.6
-55~150
175
UNITS
V
V
mA
mA
mW
mW/ oC
oC
oC/W
September 30,2015-REV.00
Page 1




Pan Jit International

PJQ1902 Datasheet Preview

PJQ1902 Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

PPJQ1902
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic (Note 5)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
SYMBOL
BVDSS
VGS(th)
RDS(on)
IDSS
IGSS
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IS
TEST CONDITION
VGS=0V, ID=250uA
VDS=VGS, ID=250uA
VGS=4.5V, ID=350mA
VGS=2.5V, ID=200mA
VGS=1.8V, ID=80mA
VGS=1.5V, ID=10mA
VDS=30V, VGS=0V
VGS=+8V, VDS=0V
VGS=+5V, VDS=0V
VDS=15V, ID=350mA,
VGS=4.5V (Note 1,2)
VDS=15V, VGS=0V,
f=1.0MHZ
VDD=15V, ID=80mA,
VGS=4.0V,
RG=6Ω (Note 1,2)
---
Diode Forward Voltage
VSD IS=350mA, VGS=0V
MIN. TYP. MAX. UNITS
30 -
-
0.6 0.85 1.1
- 0.94 1.2
- 1.32 1.6
- 1.82 2.3
- 2.5 -
- 0.01 1
- - +10
- - +1
V
V
Ω
uA
- 0.87 -
- 0.26 -
- 0.16 -
- 34 -
- 8.9 -
- 2.5 -
- 7.1 -
- 20 -
- 41 -
- 31 -
nC
pF
ns
- - 350 mA
- 0.88 1.3 V
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper
4. The maximum current rating is package limited
5. Guaranteed by design, not subject to production testing.
September 30,2015-REV.00
Page 2


Part Number PJQ1902
Description N-Channel Enhancement Mode MOSFET
Maker Pan Jit International
Total Page 6 Pages
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