900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Pan Jit International

PJQ1900 Datasheet Preview

PJQ1900 Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

PPJQ1900
20V N-Channel Enhancement Mode MOSFET
Voltage
20 V Current
1.2 A
Features
Low Voltage Drive (1.2V).
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc.
ESD Protected
Lead free in compliance with EU RoHS 2011/65/EU
directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: DFN 3L Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.00004 ounces, 0.0011 grams
Marking: 0
DFN 3L
Unit: inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current, tp<10us
Power Dissipation
TA=25oC
Tsp=25oC (Note 3)
TA=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient, t<10s (Note 4)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ,TSTG
RθJA
LIMIT
20
+10
1.2
2.0
4.0
900
7.2
-55~150
139
UNITS
V
V
A
A
mW
mW/ oC
oC
oC/W
August 28,2015-REV.00
Page 1




Pan Jit International

PJQ1900 Datasheet Preview

PJQ1900 Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

PPJQ1900
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic (Note 6)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
SYMBOL
BVDSS
VGS(th)
RDS(on)
IDSS
IGSS
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IS
TEST CONDITION
VGS=0V, ID=250uA
VDS=VGS, ID=250uA
VGS=4.5V, ID=600mA
VGS=2.5V, ID=200mA
VGS=1.8V, ID=100mA
VGS=1.5V, ID=50mA
VGS=1.2V, ID=20mA
VDS=16V, VGS=0V
VGS=+8V, VDS=0V
VDS=10V, ID=300mA,
VGS=4.5V (Note 2)
VDS=10V, VGS=0V,
f=1.0MHZ
VDD=10V, ID=150mA,
VGS=4.0V,
RG=10Ω (Note 1,2)
---
Diode Forward Voltage
VSD IS=300mA, VGS=0V
MIN. TYP. MAX. UNITS
20 - - V
0.3 0.65 0.9
V
- 300 400
- 350 650
- 400 800 mΩ
- 500 1200
- 1000 3000
- - 1 uA
-
+0.5 +10
uA
- 1.4 -
- 0.22 -
- 0.21 -
- 67 -
- 19 -
-6-
- 2.8 -
- 20 -
- 23 -
- 23 -
nC
pF
ns
- - 300 mA
- 0.87 1.3 V
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. Tsp is the temperature at the soldering point of the source lead.
4. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1inch FR-4 with 2oz. square pad of copper.
5. The maximum current rating is package limited
6. Guaranteed by design, not subject to production testing.
August 28,2015-REV.00
Page 2


Part Number PJQ1900
Description N-Channel Enhancement Mode MOSFET
Maker Pan Jit International
Total Page 6 Pages
PDF Download

PJQ1900 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 PJQ1900 N-Channel Enhancement Mode MOSFET
Pan Jit International
2 PJQ1901 P-Channel Enhancement Mode MOSFET
Pan Jit International
3 PJQ1902 N-Channel Enhancement Mode MOSFET
Pan Jit International





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy