PJD50N10AL mosfet equivalent, 100v n-channel enhancement mode mosfet.
* RDS(ON) , VGS@10V, ID@20A<25mΩ
* RDS(ON) , [email protected], ID@15A<28.5mΩ
* Advanced Trench Process Technology
* High density cell design for ultra low on-res.
shown on the herein document are examples of standard use and operation. Customers are responsible in comprehending the .
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