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PYX28HC64 Datasheet Preview

PYX28HC64 Datasheet

STATIC CMOS RAM

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FEATURES
Access Times of 70, 90, and 120ns
Single 5V±10% Power Supply
Simple Byte and Page Write
Low Power CMOS:
- 40 mA Active Current
- 200 µA Standby Current
Fast Write Cycle Times
PYX28HC64
8K x 8 EEPROM
Software Data Protection
Fully TTL Compatible Inputs and Outputs
Endurance: 100,000 Cycles
Data Retention: 100 Years
Available in the following packages:
– 32-Pin Ceramic LCC (450 x 550 mils)
– 28-Pin 600 mil Ceramic DIP
DESCRIPTION
The PYX28HC64 is a 5 Volt 8Kx8 EEPROM using floating
gate CMOS Technology. The device supports 64-byte
page write operation. The PYX28HC64 features DATA
and Toggle Bit Polling as well as a system software scheme
used to indicate early completion of a Write Cycle. The
device also includes user-optional software data protection.
Endurance is 100,000 Cycles and Data Retention is 100
Years. The device is available in a 32-Pin LCC package
as well as a 28-Pin 600 mil wide Ceramic DIP.
Pin ConfigurationS
Functional Block Diagram
DIP (C5-1)
Document # EEPROM107 REV OR
LCC (L6)
Revised August 2011




PYRAMID

PYX28HC64 Datasheet Preview

PYX28HC64 Datasheet

STATIC CMOS RAM

No Preview Available !

PYX28HC64 - 8K x 8 EEPROM
Maximum Ratings(1)
RECOMMENDED OPERATING CONDITIONS
Sym Parameter
VCC
VTERM
Power Supply Pin with
Respect to GND
Terminal Voltage with
Respect to GND (up to
7.0V)
TA Operating Temperature
TBIAS Temperature Under Bias
TSTG Storage Temperature
PT Power Dissipation
IOUT DC Output Current
Value
-0.3 to +6.25
-0.5 to +6.25
-55 to +125
-55 to +125
-65 to +150
1.0
50
Unit
V
V
°C
°C
°C
W
mA
Grade(2)
Military
Ambient Temp GND
-55°C to +125°C 0V
VCC
5.0V ± 10%
CAPACITANCES(4)
(VCC = 5.0V, TA = 25°C, f = 1.0MHz)
Sym Parameter
Conditions Typ Unit
CIN
COUT
Input Capacitance
Output Capacitance
VIN = 0V
10 pF
VOUT = 0V 10 pF
DC ELECTRICAL CHARACTERISTICS
(Over Recommended Operating Temperature & Supply Voltage)(2)
Sym Parameter
VIH Input High Voltage
VIL Input Low Voltage
VHC CMOS Input High Voltage
VLC CMOS Input Low Voltage
VOL Output Low Voltage (TTL Load)
VOH Output High Voltage (TTL Load)
ILI Input Leakage Current
ILO Output Leakage Current
ISB Standby Power Supply Current (TTL Input Levels)
ISB1 Standby Power Supply Current (CMOS Input Levels)
ICC Supply Current
Test Conditions
IOL = +5 mA, VCC = Min
IOH = -5 mA, VCC = Min
VCC = Max
VIN = GND to VCC
VCC = Max, CE = VIH,
VOUT = GND to VCC
CE ≥ VIH, OE = VIL,
VCC = Max,
f = Max, Outputs Open
CE ≥ VHC,
VCC = Max,
f = Max, Outputs Open,
VIN ≤ VLC or VIN ≥ VHC
CE = OE = VIL,
WE = VIH,
All I/O's = Open,
Inputs = VCC = 5.5V
Min Max Unit
2.0
-0.5(3)
VCC + 0.5
0.8
V
V
VCC - 0.2
-0.5(3)
VCC + 0.5
0.2
V
V
0.4 V
2.4 V
-10 +10 µA
-10 +10 µA
3 mA
250 µA
40 µA
Notes:
1. Stresses greater than those listed under Maximum Ratings may
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification
is not implied. Exposure to Maximum rating conditions for extended
periods may affect reliability.
2. Extended temperature operation guaranteed with 400 linear feet per
minute of air flow.
3. Transient inputs with VIL and IIL not more negative than -3.0V and -100mA,
respectively, are permissible for pulse widths up to 20ns.
4. This parameter is sampled and not 100% tested.
Document # EEPROM107 REV OR
Page 2


Part Number PYX28HC64
Description STATIC CMOS RAM
Maker PYRAMID
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