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P93U422 Datasheet Preview

P93U422 Datasheet

High Speed 256 X 4 Static CMOS Ram

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P93U422
HIGH SPEED 256 x 4
STATIC CMOS RAM
FEATURES
Universal 256 x 4 Static RAM
One part, the P93U422, replaces the following
bipolar and CMOS parts:
– 93422, 93422A
– 93L422, 93L422A
Fast Access Time – 35 ns Commercial and
Military
Available in the following packages:
– PDIP, CERDIP, Side Brazed DIP
– CERPACK
– LCC
– SOIC
CMOS for Low Power
– 440 mW (Commercial)
– 495 mW (Military)
5V Power Supply ±10% for both commercial
and military temperature ranges
Separate I/O
Fully static operation with equal access and
cycle times
Resistant to single event upset and latchup
due to advanced process and design
improvements
DESCRIPTION
The P93U422 is a 1,024-bit high-speed Static RAM with
a 256 x 4 organization. The P93U422 is a universal
device designed to replace the entire 93 and 93L 256 x
4 static RAM families. The memory requires no clocks
or refreshing and has equal access and cycle times.
Inputs and outputs are fully TTL compatible. Operation
is from a single 5 Volt supply. Easy memory expansion
is provided by an active LOW chip select one (CS1) and
active HIGH chip select two (CS2) as well as 3-state
outputs.
In addition to high performance, the device features latch-
up protection, single event and upset protection. The
P93U422 is offered in several packages: 22-pin 400 mil
DIP (plastic and ceramic), 24-pin 300 mil SOIC, 24-pin
square LCC and 24-pin CERPACK. Devices are offered
in both commercial and military temperature ranges.
FUNCTIONALBLOCKDIAGRAM PINCONFIGURATIONS
SOIC (S4)
CERPACK (F3)
DIP (P3-1, C3-1, D3-1)
LCC (L4)
Document # SRAM102 REV A
1 Revised October 2005
Free Datasheet http://www.datasheet4u.com/




PYRAMID

P93U422 Datasheet Preview

P93U422 Datasheet

High Speed 256 X 4 Static CMOS Ram

No Preview Available !

P93U422
MAXIMUM RATINGS(1)
Symbol
Parameter
VCC Power Supply Pin with
Respect to GND
VTERM
Terminal Voltage with
Respect to GND
(up to 7.0V)
TA Operating Temperature
Value Unit
– 0.5 to +7 V
– 0.5 to
VCC +0.5
V
– 55 to +125 °C
Symbol Parameter
TBIAS
Temperature Under
Bias
TSTG Storage Temperature
IOUT DC Output Current
Value Unit
– 55 to +125 °C
– 65 to +150 °C
20 mA
RECOMMENDED OPERATING CONDITIONS
Grade(2)
Commercial
Military
Ambient Temp
0°C to 70°C
–55°C to 125°C
Gnd Vcc
0V 5.0V ±10%
0V 5.0V ±10%
CAPACITANCES(4)
(VCC = 5.0V, TA = 25°C, f = 1.0MHz)
Symbol Parameter
Conditions Typ. Unit
CIN
COUT
Input Capacitance VIN = 0V
Output Capacitance VOUT = 0V
5 pF
7 pF
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage(2)
Symbol
Parameter
Test Conditions
VOH Output High Voltage
VCC = Min., VIN = VIH or VIL, IOH = –5.2 mA
VOL Output Low Voltage
VCC = Min., VIN = VIH or VIL, IOL = 8.0 mA
VIH Input High Level
VIL Input Low Level
IIL Input Low Current
VIN = 0.40 V
IIH Input High Current
VCC = Max, VIN = 4.5V
ISC Output Short Circuit Current (3) VCC = Max., VOUT = 0.0V
ICC Power Supply Current
All Inputs = GND
VCC = Max.
TA = 125°C
TA = 75°C
TA = 0°C
TA = –55°C
VCL Input Clamp Voltage
ICEX Output Leakage Current
IIN = –10mA
VOUT = 2.4V, VCC = Max.
VOUT = 0.5V, VCC = Max.
P93U422
Min. Max.
2.4
0.45
2.1
0.8
–300
40
–70
70
70
80
90
–1.5
50
–50
Unit
V
V
V
V
µA
µA
mA
mA
V
µA
Notes:
1. Stresses greater than those listed under MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not
implied. Exposure to MAXIMUM rating conditions for extended periods
may affect reliability
2. Extended temperature operation guaranteed with 400 linear feet per minute
of air flow.
3. Fortestpurposes,notmorethanoneoutputatatimeshouldbeshorted.Short
circuit test duration should not exceed 30 seconds.
4. This parameter is sampled and not 100% tested.
Document # SRAM102 REV A
Page 2 of 10
Free Datasheet http://www.datasheet4u.com/


Part Number P93U422
Description High Speed 256 X 4 Static CMOS Ram
Maker PYRAMID
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