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FR1000BX Datasheet Preview

FR1000BX Datasheet

REVERSE CONDUCTING THYRISTORS

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Technical Data : CD-044
Page 1 of 3
FR1000BXBWFast Switching Reverse-conducting Thyristor
2500 VDRM; 1550 A rms
**********************************************************************************************************
RCT FOR INVERTER AND CHOPPER APPLICATIONS
Features:
. All Diffused Structure
. Interdigitated Amplifying Gate Configuration
. Blocking capabilty up to 2500 volts
. Guaranteed Maximum Turn-Off Time
. High dV/dt Capability
. Pressure Assembled Device
ELECTRICAL CHARACTERISTICS AND RATINGS
Blocking - Off State
Device Type VDRM (1) VDSM (1)
FR1000BX50 2500
2500
FR1000BW50 2500
2500
VDRM = Repetitive peak off state voltage
Repetitive peak off state
leakage
Critical rate of voltage rise
IDRM
dV/dt (4)
20 mA
80mA (3)
700 V/µsec
Notes:
All ratings are specified for Tj=25 oC unless
otherwise stated.
(1) All voltage ratings are specified for an applied
50Hz/60zHz sinusoidal waveform over the
temperature range -40 to +125 oC.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 125 oC.
(4) Minimum value for linear and exponential
waveshape to 80% rated VDRM. Gate open.
Tj = 125 oC.
(5) Non-repetitive value.
Conducting - on state
Parameter
RMS value of on-state current
Average on-state current
Peak one cycle surge
(non repetitive) current
I square t
Symbol
ITRMS
IT(AV)
FR1000BX
FR1000BW
ITSM
I2t
RNS reverse currrnt
Average reverse current
Peak on-state voltage
Peak reverse voltage
Critical rate of rise of on-state
current
Critical rate of decrease of
reverse conmmutating current
IR(RMS)
IR(AV)
VTM
VRM
di/dt
FR1000BX
FR1000BW
(di/dt)C FR1000BX
FR1000BW
Max. Typ.
1550
1000
14000
8.2.x
105
630
400
2.2
3.0
4
300
200
Units
A
A
A
A2s
Conditions
Nominal value
Continuous single-phase,half sine
wave,180°conduction
8.3 msec (60Hz), sinusoidal wave-
shape, 180o conduction, Tj = 125 oC
8.3 msec and 10.0 msec
A
A
V
V
A/µs
A/µs
Continuous single-phase,half sine
wave,180°conduction
ITM=1000A Tj = 125 oC
ITM =2400A; Tj = 125 oC
IRM=1200A, Tj = 125 oC
VD=1/2VDRM,ITM=800A f=60HZ
IGM=1.5A,diG/dt=1.0A/us,Tj=125
ITM=4000A,tw=60us,IRM=4000A,dv/d
t=700V/us,VDM=1/2VDRN,Tj=125,S
aturable reactor7500v.us
Technical Data : CD-044
Page 2 of 3




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FR1000BX Datasheet Preview

FR1000BX Datasheet

REVERSE CONDUCTING THYRISTORS

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ELECTRICAL CHARACTERISTICS AND RATINGS (cont.)
Gating
Parameter
Peak gate power dissipation
Average gate power dissipation
Symbol Min.
PGM
PG(AV)
Ma Typ.
x.
16
8
Units Conditions
W tp = 40 us
W
Peak gate current
Gate current required to trigger all
units
IGM
IGT
Gate voltage required to trigger all VGT
units
10 A
350 mA
VD = 6 V;RL = 2 ohms;Tj = +25 oC
4 V VD = 6 V;RL = 2 ohms;Tj = 25oC
Peak non- trigger voltage
VGD
0.2 V Tj = 125 oC;VD=1/2VDRM
Dynamic
Parameter
Turn-off time
Symbol
tq
. Max. Typ.
FR1000BX
35
FR1000BW
50
Units
µs
Conditions
ITM =4000 A; di1/dt = -200A/µs;
di2/dt=50A/us,IRM=500A; dV/dt
=T7j =001V25/µosCV;twDR==6102u5s0V
* For guaranteed max. value, contact factory.
THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
Parameter
Operating temperature
Storage temperature
Symbol
Tj
Tstg
Min.
-40
-40
Max.
+125
+150
Typ.
Units
oC
oC
Conditions
Thyristor part thermal resistance -
junction to fin
Diode part thermal resistamce –
junction to fin
Mounting force
RΘ(j-f)
RΘ(j-f)
P
Weight
W
0.022
0.070
oC/W Double sided cooled
oC/W Double sided cooled
lb.
kN
g
* Mounting surfaces smooth, flat and greased
Note : for case outline and dimensions, see case outline drawing in page 4 of this Technical Data
Technical Data : CD-044
Page 3 of 3


Part Number FR1000BX
Description REVERSE CONDUCTING THYRISTORS
Maker PST
Total Page 3 Pages
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