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PST

53DN04 Datasheet Preview

53DN04 Datasheet

HIGH POWER DIODE

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Technical Data
PST 53DN04
HIGH POWER DIODE FOR MEDIUM FREQUENCY WELDING
WITHOUT HOUSING ULTRATHIN DEVICE
Features
- High current capability
- Very low thermal impedance
- High power cycling capability
ELECTRICAL CHARACTERISTICS AND RATINGS
Reverse blocking
Device Type
PST 53DN04
VRRM (1) VRSM (1)
400 V 500 V
VRRM = Repetitive peak reverse voltage
VRSM = Non repetitive peak reverse voltage (2)
Notes:
All ratings are specified for Tj=25 °C unless
otherwise stated.
(1) All voltage ratings are specified for an
applied 50Hz/60Hz sinusoidal waveform
over the temperature range -40 to +180 °C.
(2) 10 ms max. pulse width
(3) Maximum value for Tj = 180 °C.
Repetitive peak reverse
leakage current
IRRM
100 mA (3)
Conducting
Parameter
Symbol Min
Average value of forward current IF(AV)
RMS value of forward current
Peak one cycle surge
(non repetitive) current
I square t
IF(RMS)
IFSM
I2 t
Peak forward voltage
VFM
Threshold voltage
VF(TO)
Forward slope resistance
rF
Max
6300
9890
70
24500
1.14
0.7
0.046
Typ
Unit
A
A
kA
kA2s
Conditions
50Hz sinewave,180o conduction,
Tc = 126 °C
50Hz sinewave,180o conduction,
Tj = Tjmax, VR = 0
Tj = Tjmax
V Forward current 10 kA, Tjmax
V Tj = Tjmax
mTj = Tjmax
Ed. 1504
pag 1 / 4




PST

53DN04 Datasheet Preview

53DN04 Datasheet

HIGH POWER DIODE

No Preview Available !

Technical Data
PST 53DN04
HIGH POWER DIODE FOR MEDIUM FREQUENCY WELDING
Thermal and mechanical characteristics and ratings
Parameter
Symbol Min Max Typ
Operating temperature
Storage temperature
Thermal resistance
junction to case
Thermal resistance
junction to case
Thermal resistance
case to sink
Mounting force
Tj -40 180
Tstg -40 180
Rth(j-c)
0.0048
Rth(j-c)
0.0062
Rth(c-s)
0.0025
F 40 60
Weight
W 100
Unit Conditions
°C
°C
°C/W Double side cooled , DC
°C/W
°C/W
kN
Double side cooled, 180° sin
Double side cooled, mounting
surfaces smooth, flat and greased
g
0.006
0.004
0.002
0.000
0.001
Thermal impedance junction to case
0.010
t [s]
0.100
1.000
Analytical expression for Zth(j-c)
Zth(j-c) ( t ) = Σi Ai · ( 1 - exp ( - t / τi ) )
i 123
Ai 1.0E-03 3.7E-03 1.7E-06 [°C/W]
τi 2.0E-03 3.8E-02 8.0E-01 [s]
Ed. 1504
pag 2 / 4


Part Number 53DN04
Description HIGH POWER DIODE
Maker PST
Total Page 4 Pages
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