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PAN3080L - 30V N-channel enhancement mode MOSFET

Description

The PAN3080L is a 30V N-channel enhancement mode MOSFET which uses advanced trench technology to provide excellent RDS(on), low gate charge.

This device is suitable for use in UPS, power switching and general purpose applications.

PAN3080L is packaged in TO-252-2L package.

Features

  • VDS(max) =30V.
  • ID (max)=80A.
  • Extremely Low RDS(on): Typ. RDS(on) = 4.0 mΩ @VGS=10 V, ID=40 A.
  • Good stability and uniformity.
  • 100% avalanche tested.
  • Excellent package for good heat dissipation.

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Datasheet Details

Part number PAN3080L
Manufacturer PSD
File Size 792.46 KB
Description 30V N-channel enhancement mode MOSFET
Datasheet download datasheet PAN3080L Datasheet

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Full PDF Text Transcription (Reference)

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PAN3080L 30V N-channel enhancement mode MOSFET General Description The PAN3080L is a 30V N-channel enhancement mode MOSFET which uses advanced trench technology to provide excellent RDS(on), low gate charge. This device is suitable for use in UPS, power switching and general purpose applications. PAN3080L is packaged in TO-252-2L package. Features ● VDS(max) =30V ● ID (max)=80A ● Extremely Low RDS(on): Typ.RDS(on) = 4.0 mΩ @VGS=10 V, ID=40 A ● Good stability and uniformity ● 100% avalanche tested ● Excellent package for good heat dissipation Applications ● Multi-cell Battery protection ● Battery Powered Systems ● UPS ● Portable Power Equipment Ordering Information Device PAN3080L Package TO-252-2L Pin count 3 Marking PAN3080L Pin Configurations TO-252-2L Datasheet V1.
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