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GX3441 - RF POWER GAN TRANSISTOR

GX3441 Description

polyfet rf devices GX3441 General .
Polyfet's GAN (on SiC) HEMT power transistors contain no internal matching; making them suitable for both broadband and narrow band applications.

GX3441 Applications

* The use of a thermally enhanced package enables this device to have superior heat dissipation properties. The high drain break down voltage permits this device to operate over a wide voltage range. RF POWER GAN TRANSISTOR 80.0 Watts Single Ended Package Style GX HIGH EFFICIENCY, LINEAR HIGH GAIN,

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Datasheet Details

Part number
GX3441
Manufacturer
POLYFET RF DEVICES
File Size
50.49 KB
Datasheet
GX3441-POLYFETRFDEVICES.pdf
Description
RF POWER GAN TRANSISTOR

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POWER GAN TRANSISTOR POLYFET RF DEVICES
POLYFET RF DEVICES GX3441-like datasheet