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polyfet rf devices
GX3441
General Description
Polyfet's GAN (on SiC) HEMT power transistors contain no internal matching; making them suitable for both broadband and narrow band applications. The use of a thermally enhanced package enables this device to have superior heat dissipation properties. The high drain break down voltage permits this device to operate over a wide voltage range.
RF POWER GAN TRANSISTOR
80.0 Watts Single Ended
Package Style GX HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE ROHS COMPLIANT
Suitable for use across 1-3000Mhz
ABSOLUTE MAXIMUM RATINGS ( T = 25 oC )
Total Device Dissipation
95 Watts
Junction to Case Thermal
Resistance
o 3.