GX3441 transistor equivalent, rf power gan transistor.
The use of a thermally enhanced package enables this device to have superior heat dissipation properties. The high drai.
Polyfet's GAN (on SiC) HEMT power transistors contain no internal matching; making them suitable for both broadband and narrow band applications. The use of a thermally enhanced package enables this device to have superior heat dissipation properties.
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