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PTP08N06N1 Datasheet Preview

PTP08N06N1 Datasheet

60V N-Channel MOSFET

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Applications:
˗ Power Supply
˗• AdDaCpt-oDr C Converters
• Charger
• SMPS Standby Power
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˗• LoLwoGwaRteDCS(OhNa) rtgoeMinimize Conductive Loss
˗• PeLaokwCuGrraetnetCvshaPruglseefoWridFtahsCt uSrwveitching Application
˗• ESODptimimpirzoevdedBCVaDSpSaCbialiptyability
PTP08N06N1
Pb Lead Free Package and Finish
VDSS
VD6S0SV
650V
RDS(ON)(MAX)
RDS(O1N.1)8:(mTyȟp.)
IDa
1I1D0A
7.0 A
Ordering Information
Part Number
37311
Package
TO-220
Brand
Absolute Maximum Ratings
TC=25ɗ unless otherwise specified
Symbol
VDSS
IDa
IDM
PD
VGS
Parameter
Drain-to-Source Voltage
Continuous Drain Current
Pulsed Drain Current @VG=10V
Power Dissipation
Derating Factor above 25ɗ
Gate-to-Source Voltage
Value
60
110
439
156
1.04
+/-20
EAS
Single Pulse Avalanche Energy
(L=1mH)
IAS Pulsed Avalanche Energy
TJ and TSTG Operating Junction and Storage Temperature Range
00
Figure 9
-55 to 175
Unit
V
A
W
W/ɗ
V
mJ
A
ɗ
Thermal Resistance
Symbol
Parameter
RșJC Junction-to-Case
Min Typ Max Unit
Test Conditions
Water cooled heatsink, PD
 ɗ/W adjusted for a peak junction
Temperature of 175ɗ
Note:
a: Calculated continuous current based upon maximum allowable junction temperature +175ɗ. Package limitation current is 80A.
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PTP08N06N1 Datasheet Preview

PTP08N06N1 Datasheet

60V N-Channel MOSFET

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OFF Characteristics
TJ=25ɗ unless otherwise specified
Symbol
Parameter
Min Typ Max Unit
BVDSS Drain-to-Source Breakdown Voltage 60
V
IDSS Drain-to-Source Leakage Current
1
100
uA
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
100
100
nA
Test Conditions
VGS=0V, ID=250uA
VDS=48V, VGS=0V
VDS=48V, VGS=0V, TJ=125 ɗ
VGS=+20V
VGS= -20V
ON Characteristics
TJ=25ɗ unless otherwise specified
Symbol
Parameter
Min Typ Max Unit
RDS(ON) Static Drain-to-Source On-Resistanc
6.5 8 mȍ
VGS(TH) Gate Threshold Voltage.
2
4V
Test Conditions
VGS=10V, ID=24A
VGS=VDS, ID=250uA
Dynamic Characteristics
Symbol
Parameter
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
Td(on) Turn-in Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Essentially independent of operating temperature
Min Typ Max Unit
Test Conditions
3396
435
151
pF
VGS=0V, VDS=55V,
f=1.0MHz
51
22 nC VDD=30V, ID=55A, VGS=10V
15
14
44
31
nS
VDD=30V, ID=55A, VG=10V,
RG=2.5ȍ
12
Source-Drain Diode Characteristics TJ=25ɗ unless otherwise specified
Symbol
Parameter
Min Typ Max Unit
VSD Diode Forward Voltage
1.2 V
Trr Reverse Recovery Time
78.5 nS
Qrr Reverse Recovery Charge
112.0 nC
Test Conditions
IS=24A, VGS=0V
Is=38A, di/dt=100A/ȝs
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Part Number PTP08N06N1
Description 60V N-Channel MOSFET
Maker PIP
Total Page 7 Pages
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