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FM180-N Datasheet Preview

FM180-N Datasheet

Chip Schottky Barrier Rectifier

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FM120-N THRU FM1100-N
CHIP SCHOTTKY BARRIER RECTIFIER
1.0A Surface Mount Schottky Barrier Rectifiers - 20V-100V
SOD-323
0.106 (2.7)
0.091 (2.3)
0.012(0.3) Typ.
0.057 (1.45)
0.041 (1.05)
0.016(0.4) Typ.
0.047 (1.2)
0.031 (0.8)
0.016(0.4) Typ.
FEATURES
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Very tiny plastic SMD package.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
MECHANICAL DATA
Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, SOD-323
Terminals :Plated terminals, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : Approximated 0.008 gram
MAXIMUM RATING (AT TA=25oC unless otherwise noted)
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PARAMETER
Forward rectified current
Forward surge current
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
See Fig.1
CONDITIONS
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TA = 25 OC
VR = VRRM TA = 125 OC
Junction to ambient
f=1MHz and applied 4V DC reverse voltage
Symbol MIN.
IO
IFSM
TYP.
MAX. UNIT
1.0 A
30 A
IR
RèJA
CJ
TSTG
0.5
mA
10
90 OC/W
120 pF
-65 +175 OC
SYMBOLS
FM120-N
FM130-N
FM140-N
FM150-N
FM160-N
FM180-N
FM1100-N
V
R
*
RM
1
(V)
20
30
40
50
60
80
100
V
*
RMS
2
(V)
14
21
28
35
42
56
70
V
*
R
3
(V)
20
30
40
50
60
80
100
V
*
F
4
(V)
0.55
0.70
0.85
Operating
temperature
TJ, (OC)
-55 to +125
-55 to +150
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1
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage




PACELEADER INDUSTRIAL

FM180-N Datasheet Preview

FM180-N Datasheet

Chip Schottky Barrier Rectifier

No Preview Available !

FM120-N THRU FM1100-N
CHIP SCHOTTKY BARRIER RECTIFIER
Rating and characteristic curves (FM120-N THRU FM1100-N)
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
1.2
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160 180 200
AMBIENT TEMPERATURE,( C)
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
30
24
18
TJ=25 C
8.3ms Single Half
12 Sine Wave
JEDEC method
6
0
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5 10
NUMBER OF CYCLES AT 60Hz
50 100
350
300
250
200
150
100
50
0
.01
FIG.4-TYPICAL JUNCTION CAPACITANCE
.05 .1
.5 1
5 10
REVERSE VOLTAGE,(V)
50 100
FIG.2-TYPICAL FORWARD
CHARACTERISTICS
50
10
3.0
1.0
0.1
FM180-N~FM1100-N
TJ=25 C
Pulse Width 300us
1% Duty Cycle
.01
.1
.3 .5 .7 .9 1.1 1.3 1.5
FORWARD VOLTAGE,(V)
FIG.5 - TYPICAL REVERSE
CHARACTERISTICS
100
10
1.0
TJ=75 C
.1
TJ=25 C
.01
0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
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2


Part Number FM180-N
Description Chip Schottky Barrier Rectifier
Maker PACELEADER INDUSTRIAL
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FM180-N Datasheet PDF






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