| Description | Product Summary The FQP12N60 & FQPF12N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V... |
| Features |
50
5
TC=25°C Power Dissipation B Derate above 25oC
PD
278 2.2
50 0.4
Junction and Storage Temperature Range
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics
TJ, TSTG TL
-55 to 150 300
Parameter Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol RθJA RθCS
FQP12N60 65 0.5
FQPF1...
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| Datasheet |
 FQP12N60 Datasheet - 468.02KB |
