FQP27P06 - P-Channel MOSFET

onsemi

General Description

This P

using onsemi’s proprietary planar stripe and DMOS technology.

state resistance, and to provide superior switching performance and high avalanche energy s

Key Features

27 A,.
60 V, RDS(on) = 70 mW (Max. ) @ VGS =.
10 V, ID =.
13.5 A.
Low Gate Charge (Typ. 33 nC).
Low Crss (Typ. 120 pF).
100% Avalanche Tested.
175°C Maximum Junction Temperature Rating GDS TO.
220.
3LD CASE 340AT.

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FQP27P06 p-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FQP27P06
Manufacturer	onsemi
File Size	297.47 KB
Description	P-Channel MOSFET
Datasheet	FQP27P06 Datasheet

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Full PDF Text Transcription (Reference)

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DATA SHEET www.onsemi.com MOSFET – P-Channel, QFET -60 V, -27 A, 70 mW FQP27P06 VDSS −60 V RDS(on) MAX 70 mW @ −10 V ID MAX −27 A Description This P−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features • −27 A, − 60 V, RDS(on) = 70 mW (Max.) @ VGS = −10 V, ID = −13.5 A • Low Gate Charge (Typ. 33 nC) • Low Crss (Typ.