* 21 A, 30 V RDS(ON) = 35 mΩ @ VGS = 10 V RDS(ON) = 50 mΩ @ VGS = 4.5 V
* Low gate charge (5nC typical)
* Fast switching
* High performance trench te.

* DC/DC converter
* Motor drives Features
* 21 A, 30 V RDS(ON) = 35 mΩ @ VGS = 10 V RDS(ON) = 50 mΩ @ VGS.

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching .

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