Description
These N & P
Channel MOSFETs are produced using onsemi’s
advanced POWERTRENCH process that has been especially tailored to minimize on
state resistance and yet maintain superior switching performance.
Features
- Q1 2.5 A, 30 V.
- RDS(on) = 95 mW @ VGS = 10 V.
- RDS(on) = 150 mW @ VGS = 4.5 V.
- Q2.
- 2.0 A,.
- 30 V.
- RDS(on) = 130 mW @ VGS =.
- 10 V.
- RDS(on) = 220 mW @ VGS =.
- 4.5 V.
- Low Gate Charge.
- High Performance Trench Technology for Extremely Low RDS(on).
- SUPERSOTt.
- 6 Package: Small Footprint (72% Smaller than
SO.
- 8); Low Profile (1 mm Thick).
- This is a Pb.
- Free Device.
FDC6333C Datasheet
