FDC6333C datasheet, mosfet equivalent, On Semiconductor

Features and benefits

* Q1 2.5 A, 30 V
* RDS(on) = 95 mW @ VGS = 10 V
* RDS(on) = 150 mW @ VGS = 4.5 V
* Q2 −2.0 A, −30 V
* RDS(on) = 130 mW @ VGS = −10 V
* RDS(on) = 2.

Application

where the bigger more expensive SO−8 and TSSOP−8 packages are impractical. Features
* Q1 2.5 A, 30 V
* RDS(on) =.

Description

These N & P−Channel MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptio.

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