FDC6333C
FDC6333C is N- & P-Channel Power MOSFET manufactured by onsemi.
Description
These N & P- Channel MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on- state resistance and yet maintain superior switching performance.
These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO- 8 and TSSOP- 8 packages are impractical.
Features
- Q1 2.5 A, 30 V
- RDS(on) = 95 m W @ VGS = 10 V
- RDS(on) = 150 m W @ VGS = 4.5 V
- Q2
- 2.0 A,
- 30 V
- RDS(on) = 130 m W @ VGS =
- 10 V
- RDS(on) = 220 m W @ VGS =
- 4.5 V
- Low Gate Charge
- High Performance Trench Technology for Extremely Low RDS(on)
- SUPERSOTt- 6 Package: Small Footprint (72% Smaller than
SO- 8); Low Profile (1 mm Thick)
- This is a Pb- Free Device
Applications
- DC- DC Converter
- Load Switch
- LCD Display Inverter
DATA SHEET .onsemi.
VDSS
RDS(ON) MAX ID MAX
Q1
30 V 95 m W @ 10 V 2.5 A
150 m W @ 4.5 V
Q2
- 30 V 130 m W @
- 10 V
- 2.0 A
220 m W @
- 4.5 V
Pin 1
TSOT- 23- 6 CASE 419BL
MARKING DIAGRAM
333 MG...
