FDC6333C Description
These N & P−Channel MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO−8 and TSSOP−8 packages are impractical.
FDC6333C Key Features
- Q1 2.5 A, 30 V
- RDS(on) = 95 mW @ VGS = 10 V
- RDS(on) = 150 mW @ VGS = 4.5 V
- Q2 -2.0 A, -30 V
- RDS(on) = 130 mW @ VGS = -10 V
- RDS(on) = 220 mW @ VGS = -4.5 V
- Low Gate Charge
- High Performance Trench Technology for Extremely Low RDS(on)
- SUPERSOTt-6 Package: Small Footprint (72% Smaller than
- This is a Pb-Free Device