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SFH483E7800 - GaAlAs Infrared Emitter

Features

  • Fabricated in a liquid phase epitaxy process.
  • Anode is electrically connected to the case.
  • High reliability.
  • Matches all Si-Photodetectors.
  • Same package as BPX 63, BP 103, LD 242, SFH 464.
  • DIN humidity caregory in acc. with DIN 40 040 GQG Besondere Merkmale:.
  • Hergestellt im Schmelzepitaxieverfahren.
  • Anode galvanisch mit dem Gehäuseboden verbunden.
  • Hohe Zuverlässigkeit.
  • Gute spektrale Anpassung an Si-Foto.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2007-12-07 GaAlAs Infrared Emitter GaAs-IR-Lumineszenzdiode Version 1.0 SFH 483 E7800 Features: • Fabricated in a liquid phase epitaxy process • Anode is electrically connected to the case • High reliability • Matches all Si-Photodetectors • Same package as BPX 63, BP 103, LD 242, SFH 464 • DIN humidity caregory in acc.
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