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BPX80 - Silicon NPN Phototransistor Arrays

Key Features

  • Package: clear epoxy.
  • ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2).
  • Spectral range of sensitivity: (typ) 450 1100 nm.
  • Multiple-digit array package.
  • High linearity.
  • Available in groups Ordering Information  Type Photocurrent  VCE = 5 V; λ = 950 nm; Ee = 0.5 mW/cm² IPCE BPX 80 320 1000 µA Only one bin within one packing unit (variation less than 2:1) Ordering Code Q62702P002.

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Datasheet Details

Part number BPX80
Manufacturer ams OSRAM
File Size 555.43 KB
Description Silicon NPN Phototransistor Arrays
Datasheet download datasheet BPX80 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Prowdwuwk.todsartaemn-bolast.tco|mVersion 1.1 BPX 80   BPX 80 Array Linear Silicon NPN Phototransistor Arrays Applications ——Industrial Automation (Machine controls, Light barriers, Vision controls) Features: ——Package: clear epoxy ——ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) ——Spectral range of sensitivity: (typ) 450 ... 1100 nm ——Multiple-digit array package ——High linearity ——Available in groups Ordering Information  Type Photocurrent  VCE = 5 V; λ = 950 nm; Ee = 0.5 mW/cm² IPCE BPX 80 320 ... 1000 µA Only one bin within one packing unit (variation less than 2:1) Ordering Code Q62702P0028  1 Version 1.