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BP104F - Silicon PIN Photodiode

Key Features

  • Package: black epoxy.
  • Qualifications: The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors.
  • ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2).
  • Especially suitable for.

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Datasheet Details

Part number BP104F
Manufacturer ams OSRAM
File Size 530.05 KB
Description Silicon PIN Photodiode
Datasheet download datasheet BP104F Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Prowdwuwk.todsartaemn-bolast.tco|mVersion 1.1 BP 104 F   BP 104 F DIL Silicon PIN Photodiode with Daylight Blocking Filter Applications ——Electronic Equipment ——Industrial Automation (Machine controls, Light barriers, Vision controls) Features: ——Package: black epoxy ——Qualifications: The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors. ——ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) ——Especially suitable for applications of 950 nm ——Short switching time (typ. 20 ns) ——DIL plastic package with high packing density Ordering Information  Type Photocurrent  Ee = 1 mW/cm²; λ = 950 nm; VR = 5 V IP Photocurrent  typ.