Datasheet4U Logo Datasheet4U.com

OSD30N06T - 60V N-CHANNEL MOSFET

Features

  • s：.
  • Fast switching speed.
  • High input impedance and low level drive.
  • Avalanche energy tested.
  • Improved dv/dt capability，high ruggedness dv/dt ， TO-252.

📥 Download Datasheet

Datasheet Details

Part number OSD30N06T
Manufacturer OSEN
File Size 214.20 KB
Description 60V N-CHANNEL MOSFET
Datasheet download datasheet OSD30N06T Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
OSD3-5T (OSDxx-5T) Photovoltaic OSI
OSD3-5T (OSDxx-5T) General Purpose Silicon Sensors CENTRONIC
OSD3-E Silicon Photodetectors ETC
OSD3-E Silicon Photodetectors CENTRONIC
OSD32MP157 Microprocessor OCTAVO

Other Datasheets by OSEN

Part Number Description
OSD1074 NPN/PNP Complementary Silicon Power Transistors
OSD10N10 100V N-CHANNEL MOSFET
OSD15N10 100V N-CHANNEL MOSFET
OSD2N65 650V N-CHANNEL MOSFET
OSD50N10G 100V N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
OSD30N06T http://www.osen.net.cn 60V N-CHANNEL MOSFET  Features：  Fast switching speed  High input impedance and low level drive  Avalanche energy tested  Improved dv/dt capability，high ruggedness dv/dt ， TO-252  Applications  High efficiency switch mode power supplies  Power factor correction  Electronic lamp ballast Publication Order Number:[OSD30N06T] @OSEN*Rev 21.2.10 1 OSD30N06T http://www.osen.net.cn 60V N-CHANNEL MOSFET  Absolute Maximum Ratings (Tc=25°C) Symbol Parameters Drain-Source Voltage VDSS Gate-Source Voltage-Continuous VGS Drain Current-Continuous（Note 2） ID Drain Current-Single Plused（Note 1） IDM Power Dissipation （Note 2） PD Tj Max.
Published: |