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OPTO DIODE

AXUVPS7 Datasheet Preview

AXUVPS7 Datasheet

QUAD ELECTRON DETECTOR

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QUAD ELECTRON DETECTOR 15 mm2
AXUVPS7
FEATURES
• Ideal for electron detection
• Circular active area
• 100% internal QE
Dimensions are in inch [metric] units.
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C (PER ELEMENT)
PARAMETERS
TEST CONDITIONS
MIN
Active Area
Responsivity, R
(see graphs on the next page) 0.07
Shunt Resistance, RsH
Reverse Breakdown Voltage, VR
Capacitance, C
Rise Time
VR = ±10mV
IR = 1µA
VR = 0V
VR = 2V, RL = 50Ω
10
5
TYP
15
0.08
1.5
MAX
0.09
2
UNITS
mm2
A/W
MOhms
Volts
nF
usec
THERMAL PARAMETERS
STORAGE AND OPERATING TEMPERATURE RANGE
Ambient1
Nitrogen or Vacuum
Maximum Junction Temperature
Lead soldering temperature2
-10° TO 40°C1
-20°C TO 80°C
70°C
260°C
1Temperatures exceeding these parameters may create oxide growth on the active area.
Over time responsivity to low energy radiation and wavelengths below 150nm will be compromised.
20.080" from case for 10 seconds.
Shipped with temporary cover to protect photodiode and wire bond.
Review Opto Diode “Handling Precautions for IRD Detectors” prior to removing cover.
Revision February 26, 2013
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com




OPTO DIODE

AXUVPS7 Datasheet Preview

AXUVPS7 Datasheet

QUAD ELECTRON DETECTOR

No Preview Available !

ELECTRON DETECTION 15 mm2
ELECTRON RESPONSE
0.30
0.25
0.20
0.15
0.10
0.05
0.00
100
1000
10,000
ENERGY (ev)
AXUVPS7
100,000
EUV-UV PHOTON RESPONSE
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0
50 100 150
WAVELENGTH (nm)
200
250
UV-VIS-NIR PHOTON RESPONSIVITY
0.5
0.4
0.3
0.2
0.1
0.0
200 300 400 500 600 700 800
WAVELENGTH (nm)
900 1000 1100
Revision February 26, 2013
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com


Part Number AXUVPS7
Description QUAD ELECTRON DETECTOR
Maker OPTO DIODE
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