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OPTO DIODE

AXUV63HS1 Datasheet Preview

AXUV63HS1 Datasheet

PHOTODIODE

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PHOTODIODE Ø9mm
AXUV63HS1
FEATURES
• Circular active area
• Ideal for electron detection
• 100% internal QE
• High speed
Dimensions are in inch [metric] units.
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
TEST CONDITIONS
Active Area
9mm
Responsivity, R
(see graphs on next page)
Reverse Breakdown Voltage, VR
IR = 1μA
Capacitance, C
Rise Time
VR = 0V
RL = 50Ω, VR = 2V
Dark Current
VR = 150V
MIN
160
TYP
63
MAX
10
2
100
THERMAL PARAMETERS
STORAGE AND OPERATING TEMPERATURE RANGE
Ambient1
Nitrogen or Vacuum
Maximum Junction Temperature
Lead soldering temperature2
-10° TO 40°C1
-20°C TO 80°C
70°C
260°C
1Temperatures exceeding these parameters may create oxide growth on the active area.
Over time responsivity to low energy radiation and wavelengths below 150nm will be compromised.
20.080" from case for 10 seconds.
Shipped with temporary cover to protect photodiode and wire bond.
Review Opto Diode “Handling Precautions for IRD Detectors” prior to removing cover.
UNITS
mm2
A/W
Volts
pF
nsec
nA
Revision July 21, 2014
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
143




OPTO DIODE

AXUV63HS1 Datasheet Preview

AXUV63HS1 Datasheet

PHOTODIODE

No Preview Available !

PHOTODIODE 63 mm2
ELECTRON RESPONSE
0.30
0.25
0.20
0.15
0.10
0.05
0.00
100
1000
10,000
ENERGY (ev)
AXUV63HS1
100,000
EUV-UV PHOTON RESPONSE
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0
50 100 150
WAVELENGTH (nm)
200
250
UV-VIS-NIR PHOTON RESPONSIVITY
0.5
0.4
0.3
0.2
0.1
0.0
200 300 400 500 600 700 800
WAVELENGTH (nm)
900 1000 1100
Revision February 26, 2013
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
144


Part Number AXUV63HS1
Description PHOTODIODE
Maker OPTO DIODE
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AXUV63HS1 Datasheet PDF






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