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OPTO DIODE

AXUV576C Datasheet Preview

AXUV576C Datasheet

ELECTRON DETECTION

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ELECTRON DETECTION 576 mm2
AXUV576C
FEATURES
• Square active area
• Round 4 pin package
• Ideal for electron detection
• 100% internal QE
Dimensions are in inch [metric] units.
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
TEST CONDITIONS
Active Area
24.01mm x 24.01mm
Responsivity, R
(see graphs on next page)
Shunt Resistance, Rsh
@±10mV
Reverse Breakdown Voltage, VR
Capacitance, C
Rise Time, tr
IR = 1µA
VR = 0V
VR = 10V, RL = 50Ω
MIN
5
5
TYP
576.5
MAX
50
120
50
THERMAL PARAMETERS
STORAGE AND OPERATING TEMPERATURE RANGE
Ambient2
Nitrogen or Vacuum
Maximum Junction Temperature
Lead Soldering Temperature1
-10° TO 40°C
-20°C TO 80°C
70°C
260°C
10.08" from case for 10 seconds.
2Temperatures exceeding these parameters may create Oxide growth on the active area.
Over time Responsivity to Low energy radiation and wavelengths below 150nm will Be Compromised.
UNITS
mm2
MOhm
Volts
nF
usec
Revision June 23, 2013
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com




OPTO DIODE

AXUV576C Datasheet Preview

AXUV576C Datasheet

ELECTRON DETECTION

No Preview Available !

ELECTRON DETECTION 100 mm2
ELECTRON RESPONSE
0.30
0.25
0.20
0.15
0.10
0.05
0.00
100
1000
10,000
ENERGY (ev)
AXUV576C
100,000
EUV-UV PHOTON RESPONSE
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0
50 100 150
WAVELENGTH (nm)
200
250
UV-VIS-NIR PHOTON RESPONSIVITY
0.5
0.4
0.3
0.2
0.1
0.0
200 300 400 500 600 700 800
WAVELENGTH (nm)
900 1000 1100
Revision June 23, 2013
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com


Part Number AXUV576C
Description ELECTRON DETECTION
Maker OPTO DIODE
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AXUV576C Datasheet PDF






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