OP770B transistor equivalent, npn photo transistor.
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Supresses high frequency noise Variety of sensitivity ranges Wide receiving angle Side looking package for space limited applications
Ab so lute .
Ab so lute Maxi mum Rat ings (TA = 25o C un less oth er wise noted)
Collector- Emitter Volt age. . . . . . . . . . . . .
The OP770 consists of an NPN phototransistor and 1000 pF capacitor molded in a clear epoxy package. The internal collector-emitter capacitor allows the device to be used in applications where external high frequency emissions could compromise signal .
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