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TIP35B - Complementary Silicon High-Power Transistors

Download the TIP35B datasheet PDF. This datasheet also covers the TIP35A variant, as both devices belong to the same complementary silicon high-power transistors family and are provided as variant models within a single manufacturer datasheet.

Features

  • 25 A Collector Current.
  • Low Leakage Current.
  • ICEO = 1.0 mA @ 30 and 60 V.
  • Excellent DC Gain.
  • hFE = 40 Typ @ 15 A.
  • High Current Gain Bandwidth Product.
  • ⎪hfe⎪ = 3.0 min @ IC = 1.0 A, f = 1.0 MHz.
  • These are Pb.
  • Free Devices.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TIP35A-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number TIP35B
Manufacturer onsemi
File Size 258.06 KB
Description Complementary Silicon High-Power Transistors
Datasheet download datasheet TIP35B Datasheet

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Other Datasheets by onsemi

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TIP35A Complementary Silicon High-Power Transistors
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Complementary Silicon High-Power Transistors TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) Designed for general−purpose power amplifier and switching applications. Features • 25 A Collector Current • Low Leakage Current − ICEO = 1.0 mA @ 30 and 60 V • Excellent DC Gain − hFE = 40 Typ @ 15 A • High Current Gain Bandwidth Product − ⎪hfe⎪ = 3.0 min @ IC = 1.0 A, f = 1.0 MHz • These are Pb−Free Devices* MAXIMUM RATINGS Symbol Rating TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C Unit VCEO Collector − Emitter Voltage 60 VCB Collector − Base Voltage 60 VEB Emitter − Base Voltage IC Collector Current − Continuous − Peak (Note 1) 80 100 Vdc 80 100 Vdc 5.0 Vdc Adc 25 40 IB Base Current − Continuous 5.
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