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NTD60N02R Power MOSFET
Features
62 A, 24 V, N−Channel, DPAK
• • • • • •
Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in High−Efficiency DC−DC Converters Pb−Free Packages are Available
http://onsemi.com
V(BR)DSS 24 V
RDS(on) TYP 8.