T60N02R Overview
Key Features
- Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in High-Efficiency DC-DC Converters Pb-Free Packages are Available
- Continuous Thermal Resistance Junction-to-Case Total Power Dissipation @ TC = 25°C Drain Current Continuous @ TC = 25°C, Chip Continuous @ TC = 25°C, Limited by Package Continuous @ TA = 25°C, Limited by Wires Thermal Resistance Junction-to-Ambient (Note 1) Total Power Dissipation @ TA = 25°C Drain Current