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SZESD9R3.3S - ESD Protection Diode

General Description

of survivability specs.

Rev.

Key Features

  • Ultra.
  • Low Leakage < 1 nA.
  • Ultra.
  • Low Capacitance 0.5 pF.
  • Low Clamping Voltage.
  • Small Body Outline Dimensions: 0.039.
  • x 0.024.
  • (1.00 mm x 0.60 mm).
  • Low Body Height: 0.016.
  • (0.4 mm).
  • Stand.
  • off Voltage: 3.3 V.
  • Response Time < 1.0 ns.
  • IEC61000.
  • 4.
  • 2 Level 4 ESD Protection.
  • SZ Prefix for Automotive and Other.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET www.onsemi.com ESD Protection Diode Ultra−Low Capacitance ESD9R3.3S, SZESD9R3.3S The ESD9R is designed to provide ESD protection for ASSPs and ASICs used in ultra low current applications such as human body sensors. These devices have been designed for leakage under 1 nA from 0C to 50C when turned off. During an ESD event, these devices turn on to clamp the ESD to a safe voltage level for the IC. These devices have the added benefits of low capacitance for high speed data lines and small package size for space constrained designs. Specification Features:  Ultra−Low Leakage < 1 nA  Ultra−Low Capacitance 0.5 pF  Low Clamping Voltage  Small Body Outline Dimensions: 0.039 x 0.024 (1.00 mm x 0.60 mm)  Low Body Height: 0.016 (0.4 mm)  Stand−off Voltage: 3.