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BCW33LT1G, SBCW33LT1G
General Purpose Transistor
NPN Silicon
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS
VCEO VCBO VEBO
IC
32 Vdc 32 Vdc 5.0 Vdc 100 mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board
(Note 1)
TA = 25°C Derate above 25°C
PD
225 mW 1.8 mW/°C
Thermal Resistance, Junction−to−Ambient
RqJA
556 °C/W
Total Device Dissipation
Alumina Substrate (Note 2),
TA = 25°C Derate above 25°C
PD
300 mW 2.
SBCW33LT1G Datasheet
