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  ON Semiconductor Electronic Components Datasheet  

SBCW30LT1G Datasheet

General Purpose Transistors

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BCW30LT1G, SBCW30LT1G
General Purpose
Transistors
PNP Silicon
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector − Emitter Voltage
VCEO −32 Vdc
Collector − Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
VCBO
VEBO
IC
−32
−5.0
−100
Vdc
Vdc
mAdc
Characteristic
Symbol
Value
Unit
Total Device Dissipation
FR-5 Board (Note 1)
TA = 25°C
Derate above 25°C
PD mW
225
1.8 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
556 °C/W
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate above 25°C
PD 300 mW
2.4 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg −55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
www.onsemi.com
SOT−23 (TO−236)
CASE 318−08
STYLE 6
COLLECTOR
3
1
BASE
2
EMITTER
MARKING DIAGRAM
C2 M G
G
1
C2 = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
BCW30LT1G
SBCW30LT1G
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
3,000/Tape & Reel
3,000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1999
November, 2016 − Rev. 4
1
Publication Order Number:
BCW30LT1/D


  ON Semiconductor Electronic Components Datasheet  

SBCW30LT1G Datasheet

General Purpose Transistors

No Preview Available !

BCW30LT1G, SBCW30LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = −2.0 mAdc, IE = 0)
Collector−Emitter Breakdown Voltage
(IC = −100 mAdc, VEB = 0)
Collector−Base Breakdown Voltage
(IC = −10 mAdc, IC = 0)
Emitter−Base Breakdown Voltage
(IE = −10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = −32 Vdc, IE = 0)
(VCB = −32 Vdc, IE = 0, TA = 100°C)
ON CHARACTERISTICS
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
−32
−32
−32
−5.0
−100
−10
Vdc
Vdc
Vdc
Vdc
nAdc
mAdc
DC Current Gain
(IC = −2.0 mAdc, VCE = −5.0 Vdc)
Collector−Emitter Saturation Voltage
(IC = −10 mAdc, IB = −0.5 mAdc)
Base−Emitter On Voltage
(IC = −2.0 mAdc, VCE = −5.0 Vdc)
SMALL−SIGNAL CHARACTERISTICS
hFE
VCE(sat)
VBE(on)
215
−0.6
500
−0.3
−0.75
Vdc
Vdc
Output Capacitance
(IE = 0, VCB = −10 Vdc, f = 1.0 MHz)
Cobo
pF
7.0
Noise Figure
(IC = −0.2 mAdc, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
NF dB
− 10
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
10
7.0
5.0
3.0
2.0 1.0 mA
1.0
10 20
TYPICAL NOISE CHARACTERISTICS
(VCE = −5.0 Vdc, TA = 25°C)
IC = 10 mA
30 mA
100 mA
300 mA
BANDWIDTH = 1.0 Hz
RS 0
50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
f, FREQUENCY (Hz)
Figure 1. Noise Voltage
1.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
10 20
IC = 1.0 mA
BANDWIDTH = 1.0 Hz
RS ≈ ∞
300 mA
100 mA
30 mA
10 mA
50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
f, FREQUENCY (Hz)
Figure 2. Noise Current
www.onsemi.com
2


Part Number SBCW30LT1G
Description General Purpose Transistors
Maker ON Semiconductor
Total Page 7 Pages
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